K.K. Bourdelle

Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

Sylvain Barraud, Matthieu Berthomé, R. Coquand et al. · IEEE Electron Device Letters · 2012 · 259 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

Lars Knoll, Qing‐Tai Zhao, A. Nichau et al. · IEEE Electron Device Letters · 2013 · 196 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +9

High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding

O. Weber, O. Faynot, F. Andrieu et al. · 2008 · 159 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

Renato Amaral Minamisawa, Martin Süess, Ralph Spolenak et al. · Nature Communications · 2012 · 150 citations · Full text

Materials Science, Silicon Nanowires, Engineering +11

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

F. Andrieu, O. Weber, J. Mazurier et al. · 2010 · 103 citations

Engineering, Vlsi Design, Integrated Circuits +16