Karl Hofmann

A Simple Model Describing the Symmetric <formula formulatype="inline"><tex Notation="TeX">$I\hbox{--}V$</tex></formula> Characteristics of <formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Polycrystalline Si/ <formula formulatype="inline"><tex Notation="TeX">$\hbox{n}$</tex></formula> Monocrystalline Si, and <formula formulatype="inline"> <tex Notation="TeX">$\hbox{n}$</tex></formula> Polycrystalline Si/<formula formulatype="inline"><tex Notation="TeX">$\hbox{p}$</tex></formula> Monocrystalline Si Junctions

Robby Peibst, Udo Römer, Karl Hofmann et al. · IEEE Journal of Photovoltaics · 2014 · 98 citations

Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates

P. Nguyen, Karl Hofmann, G. Paasch · Journal of Applied Physics · 2003 · 52 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

An Effective Switching Current Methodology to Predict the Performance of Complex Digital Circuits

K. von Arnim, C. Pacha, Karl Hofmann et al. · 2007 · 40 citations

Device Modeling, Electrical Engineering, Engineering +14

A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon

Björn Fischer, Karl Hofmann · Applied Physics Letters · 2000 · 34 citations

Engineering, Temperature Dependence, Wave-vector-dependent Phonon +17

HCI vs. BTI? - Neither one's out

Christian Schlünder, S. Aresu, Georg Georgakos et al. · 2012 · 34 citations

Hot Carrier Injection, Electrical Engineering, Engineering +14