Olivier Richard

10×10nm<sup>2</sup> Hf/HfO<inf>x</inf> crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu, Gouri Sankar Kar, YY Chen et al. · 2011 · 603 citations

Non-volatile Memory, Resistive Ram, Engineering +17

Three-Dimensional Observation of the Conductive Filament in Nanoscaled Resistive Memory Devices

Umberto Celano, Ludovic Goux, Attilio Belmonte et al. · Nano Letters · 2014 · 332 citations

Observed Filament, Such Filament, Engineering +19

Fe₂O₃ Nanoparticles within Mesoporous MCM-48 Silica:  In Situ Formation and Characterization

Michael Fröba, Ralf Köhn, Gaëlle Bouffaud et al. · Chemistry of Materials · 1999 · 240 citations

Materials Science, Molecular Sieve, Engineering +13

Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates

Hans Mertens, R. Ritzenthaler, Andriy Hikavyy et al. · 2016 · 192 citations

Engineering, Si Nws, Bulk Si Substrates +16

Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

Umberto Celano, Ludovic Goux, R. Degraeve et al. · Nano Letters · 2015 · 180 citations

Materials Science, Filaments Exhibit, Electrical Engineering +12