J.C. de Jaeger

AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

S. Bouzid-Driad, Hassan Maher, N. Defrance et al. · IEEE Electron Device Letters · 2012 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

Recent developments of wide-bandgap semiconductor based UV sensors

A. BenMoussa, A. Soltani, U. Schühle et al. · Diamond and Related Materials · 2008 · 115 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

D. Ducatteau, A. Minko, Virginie Hoel et al. · IEEE Electron Device Letters · 2005 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

Hassan Ali Barkad, M. Mattalah, B. Benbakhti et al. · Applied Physics Letters · 2008 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

A. Sozza, C. Dua, E. Morvan et al. · 2006 · 85 citations

Engineering, Electrical Engineering, Physics +14