Hassan Maher

AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

S. Bouzid-Driad, Hassan Maher, N. Defrance et al. · IEEE Electron Device Letters · 2012 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High <italic>di/dt</italic> Applications

Adrien Letellier, Maxime R. Dubois, João Pedro F. Trovão et al. · IEEE Transactions on Power Electronics · 2018 · 57 citations

Engineering, Electrical Engineering, Power Electronics +16

Microstructure and phase stability of suspension high velocity oxy-fuel sprayed yttria stabilised zirconia coatings from aqueous and ethanol based suspensions

Mingwen Bai, Hassan Maher, Zdeněk Pala et al. · Journal of the European Ceramic Society · 2017 · 51 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Gallium Nitride Semiconductors in Power Electronics for Electric Vehicles: Advantages and Challenges

Adrien Letellier, Maxime R. Dubois, João Pedro F. Trovão et al. · 2015 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

Ahmed Chakroun, Hassan Maher, Elias Al Alam et al. · IEEE Electron Device Letters · 2014 · 34 citations

Engineering, Materials Engineering, Materials Science +17