N. Defrance

AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

S. Bouzid-Driad, Hassan Maher, N. Defrance et al. · IEEE Electron Device Letters · 2012 · 116 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

P. Altuntas, F. Lecourt, Adrien Cutivet et al. · IEEE Electron Device Letters · 2015 · 69 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

F. Lecourt, N. Ketteniss, H. Behmenburg et al. · IEEE Electron Device Letters · 2011 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

Sarra Mhedhbi, Marie Lesecq, P. Altuntas et al. · IEEE Electron Device Letters · 2016 · 29 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters

Loris Pace, N. Defrance, Arnaud Videt et al. · IEEE Transactions on Electron Devices · 2019 · 27 citations · Full text

Electrical Engineering, Engineering, Power Transistor +10