Marie Lesecq

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

P. Altuntas, F. Lecourt, Adrien Cutivet et al. · IEEE Electron Device Letters · 2015 · 69 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

Marie Lesecq, Virginie Hoel, A. Lecavelier Des Etangs-Levallois et al. · IEEE Electron Device Letters · 2010 · 52 citations

Materials Science, Materials Engineering, Electrical Engineering +14

First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

Sarra Mhedhbi, Marie Lesecq, P. Altuntas et al. · IEEE Electron Device Letters · 2016 · 29 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Y. Cordier, Rémi Comyn, Éric Frayssinet et al. · physica status solidi (a) · 2017 · 27 citations · Full text

Semiconductors, Materials Science, Electrical Engineering +15

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

S. Rennesson, F. Lecourt, Nicolas Defrance et al. · IEEE Transactions on Electron Devices · 2013 · 25 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10