Jr-Tai Chen

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Sebastian Gustafsson, Jr-Tai Chen, Johan Bergsten et al. · IEEE Transactions on Electron Devices · 2015 · 81 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

Tino Hofmann, Philipp Kühne, S. Schöche et al. · Applied Physics Letters · 2012 · 51 citations

Semiconductors, Layer Thickness, Electrical Engineering +15

Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface

Jr-Tai Chen, James W. Pomeroy, Niklas Rorsman et al. · Journal of Crystal Growth · 2015 · 36 citations · Full text

Wide-bandgap Semiconductor, Low Thermal Resistance, Electrical Engineering +6

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Yen-Ku Lin, Johan Bergsten, Hector Leong et al. · Semiconductor Science and Technology · 2018 · 26 citations

Materials Science, Semiconductors, Electrical Engineering +15

m -plane (1010) InN heteroepitaxied on (100)-γ-LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy

Ching‐Lien Hsiao, Jr-Tai Chen, Hsu‐Cheng Hsu et al. · Journal of Applied Physics · 2010 · 11 citations