Capture cross sections of electron irradiation induced defects in 6H–SiC

Abstract

An investigation of electron irradiation induced deep levels in 6H–SiC p+n diodes grown by chemical vapor deposition has been performed. Deep level transient spectroscopy (DLTS) reveals several overlapping peaks in the temperature range 140–650 K. The electron capture cross sections have been measured by directly observing the variation of the DLTS peak height with the duration of the filling pulse and fitting the capacitance transient using multiple linear regression. Temperature dependence studies of the electron capture cross section were performed on three of the observed levels.