David W. Greve

Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films

Miltiadis K. Hatalis, David W. Greve · Journal of Applied Physics · 1988 · 318 citations

Engineering, Average Grain Size, Thin Film Process Technology +18

Determination of wurtzite GaN lattice polarity based on surface reconstruction

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Applied Physics Letters · 1998 · 305 citations

Materials Science, Materials Engineering, Polarity Assignment +15

Reconstructions of GaN(0001) and (0001) surfaces: Ga-rich metallic structures

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1998 · 242 citations

Preparation of atomically flat surfaces on silicon carbide using hydrogen etching

V. Ramachandran, M.F. Brady, Arthur R. Smith et al. · Journal of Electronic Materials · 1998 · 207 citations

Materials Science, Materials Engineering, Engineering +10

Inversion of wurtzite GaN(0001) by exposure to magnesium

V. Ramachandran, R. M. Feenstra, Wendy L. Sarney et al. · Applied Physics Letters · 1999 · 202 citations

Materials Engineering, Materials Science, Aluminium Nitride +12