V. Ramachandran

Preparation of atomically flat surfaces on silicon carbide using hydrogen etching

V. Ramachandran, M.F. Brady, Arthur R. Smith et al. · Journal of Electronic Materials · 1998 · 207 citations

Engineering, Materials Engineering, Materials Science +14

Inversion of wurtzite GaN(0001) by exposure to magnesium

V. Ramachandran, R. M. Feenstra, Wendy L. Sarney et al. · Applied Physics Letters · 1999 · 205 citations

Engineering, Materials Engineering, Materials Science +12

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Electrical Engineering, Microelectronics +16

Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction

Arthur R. Smith, V. Ramachandran, R. M. Feenstra et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 121 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Scanning Tunneling Spectroscopy of Mott-Hubbard States on the 6H-SiC(0001) √3 ×√3 Surface

V. Ramachandran, R. M. Feenstra · Physical Review Letters · 1999 · 110 citations

Natural Sciences, Materials Science, Physics +15