Wendy L. Sarney

Inversion of wurtzite GaN(0001) by exposure to magnesium

V. Ramachandran, R. M. Feenstra, Wendy L. Sarney et al. · Applied Physics Letters · 1999 · 202 citations

Materials Engineering, Materials Science, Aluminium Nitride +12

Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3

Maoqi He, Indira Minus, Piezhen Zhou et al. · Applied Physics Letters · 2000 · 199 citations

Materials Science, Wide-bandgap Semiconductor, Large-scale Gan Nanowires +11

Growth of GaN nanowires by direct reaction of Ga with NH3

Maoqi He, P. Zhou, S. Noor Mohammad et al. · Journal of Crystal Growth · 2001 · 114 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +6

Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys

C.J. Collins, Anand V. Sampath, Gregory A. Garrett et al. · Applied Physics Letters · 2005 · 95 citations

Optical Materials, Engineering, Luminescence Efficiency +16

Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials

I. Vurgaftman, Gregory Belenky, Youxi Lin et al. · Applied Physics Letters · 2016 · 88 citations

Interband Absorption Strength, Small-period Metamorphic Sls, Engineering +18