Wendy L. Sarney - Concepedia

Author

Wendy L. Sarney

Also Known As

G. Belenky, Levy, Ido, Sarney, W. L., Sarney, Wendy L., W L Sarney, W. L SARNEY, W. L. SARNEY, W. L. Sarney, W. Sarney, W.L SARNEY

176

Publications

2.4K

Citations

H-Index

Concepts

All Affiliations

DEVCOM Army Research Laboratory Stony Brook University University of Maryland, College Park University of Nottingham Lawrence Berkeley National Laboratory

About

Wendy L. Sarney is an author at DEVCOM Army Research Laboratory specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	46	1.8K
2	Applied Physics	24	44	1.7K
3	Chemistry	4	4	61
4	Natural Sciences	3	3	148
5	Computer Engineering	1	1	40

Wendy L. Sarney

Publications

Citations

H-Index

Page 1

	Year	Citations
Inversion of wurtzite GaN(0001) by exposure to magnesium V. Ramachandran, R. M. Feenstra, Wendy L. Sarney, Applied Physics Letters Materials EngineeringMaterials ScienceAluminium NitrideEngineeringPhysics	1999	202
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3 Maoqi He, Indira Minus, Piezhen Zhou, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorLarge-scale Gan NanowiresEngineeringNanotechnology	2000	199
Growth of GaN nanowires by direct reaction of Ga with NH3 Maoqi He, P. Zhou, S. Noor Mohammad, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorEngineeringNanotechnologyApplied Physics	2001	114
Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys C.J. Collins, Anand V. Sampath, Gregory A. Garrett, Applied Physics Letters Optical MaterialsEngineeringLuminescence EfficiencyRoom-temperature Luminescence EfficiencyHigh Defect Density	2005	95
Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials I. Vurgaftman, Gregory Belenky, Youxi Lin, Applied Physics Letters Interband Absorption StrengthSmall-period Metamorphic SlsEngineeringAbsorption SpectroscopySpectroscopic Property	2016	88
Properties of unrelaxed InAs1−XSbX alloys grown on compositionally graded buffers Gregory Belenky, D. Donetsky, G. Kipshidze, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductorsOptical Properties	2011	65
Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001) C. D. Lee, Ashutosh Sagar, R. M. Feenstra, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringGa FluxX-ray Rocking Curve	2001	64
Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001) Arthur R. Smith, V. Ramachandran, R. M. Feenstra, MRS Internet Journal of Nitride Semiconductor Research	1998	63
Molecular beam epitaxy control and photoluminescence properties of InAsBi Stefan P. Svensson, H. Hier, Wendy L. Sarney, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Materials ScienceLocal Phase SeparationOverpressure RatioThick Inasbi LayersEngineering	2011	48
The Effects of Multiphase Formation on Strain Relaxation and Magnetization in Multiferroic BiFeO<sub>3</sub> Thin Films S. H. Lim, Makoto Murakami, Wendy L. Sarney, Advanced Functional Materials Magnetic PropertiesEngineeringMagnetic MaterialsMagnetismMultiferroics	2007	47

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