Maoqi He

Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3

Maoqi He, Indira Minus, Piezhen Zhou et al. · Applied Physics Letters · 2000 · 199 citations

Materials Science, Wide-bandgap Semiconductor, Large-scale Gan Nanowires +11

Growth of GaN nanowires by direct reaction of Ga with NH3

Maoqi He, P. Zhou, S. Noor Mohammad et al. · Journal of Crystal Growth · 2001 · 114 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +6

Diameter dependent transport properties of gallium nitride nanowire field effect transistors

Abhishek Motayed, Mark D. Vaudin, Albert V. Davydov et al. · Applied Physics Letters · 2007 · 94 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique

Abhishek Motayed, Maoqi He, Albert V. Davydov et al. · Journal of Applied Physics · 2006 · 58 citations

Engineering, Nanodevices, Semiconductor Device +20

Photochemistry of Cyanoacetylene at 193.3 nm

Kanekazu Seki, Maoqi He, Renzhang Liu et al. · The Journal of Physical Chemistry · 1996 · 46 citations

Engineering, Photoredox Process, Photochemistry +10