J. Comas - Concepedia

Author

J. Comas

United States Naval Research Laboratory

Also Known As

J Comas, J. COMAS, J. Comas, JAMES COMAS, James Comas, Júlia Mateu Comas

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory National Institute of Standards and Technology HRL Laboratories (United States)Naval Air Warfare Center Weapons Division University of Delaware

About

J. Comas is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	33	1.6K
2	Applied Physics	21	33	1.5K
3	Natural Sciences	4	4	318
4	Chemistry	4	4	90
5	Chemical Engineering	3	3	76

J. Comas

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Binding of Shallow Donor Impurities in Quantum-Well Structures N. Jarosik, B. D. McCombe, B. V. Shanabrook, Physical Review Letters SemiconductorsQuantum ScienceMaterials ScienceCentral RegionEngineering	1985	233
Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions O. J. Glembocki, B. V. Shanabrook, N. Bottka, Applied Physics Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringOptoelectronic DevicesAlgaas Layers	1985	211
Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP G. DeSalvo, Wen Feng Tseng, J. Comas Journal of The Electrochemical Society EngineeringElectron-beam LithographyOptoelectronic DevicesElectronic DevicesBeam Lithography	1992	166
Photoluminescence from “spike doped” hydrogenic donors in Al0.3Ga0.7As-GaAs quantum wells B. V. Shanabrook, J. Comas Surface Science SemiconductorsPhotoluminescenceEngineeringPhysicsApplied Physics	1984	95
Study of ion-implantation damage in GaAs:Be and InP:Be using Raman scattering C. S. Rama Rao, Suresh Sundaram, R. L. Schmidt, Journal of Applied Physics Optical MaterialsEngineeringSemiconductor NanostructuresSemiconductorsShort-range Order	1983	87
Observation of Resonant Impurity States in Semiconductor Quantum-Well Structures Thomas A. Perry, R. Merlín, B. V. Shanabrook, Physical Review Letters SemiconductorsQuantum ScienceSemiconductor TechnologyCharge ExcitationsPower Density	1985	66
Annealing studies of Be-doped GaAs grown by molecular beam epitaxy W. V. McLevige, K. V. Vaidyanathan, B. G. Streetman, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering	1978	61
Negative differential resistance at 300 K in a superlattice quantum state transfer device S. W. Kirchoefer, R. Magno, J. Comas Applied Physics Letters Categoryquantum ElectronicsQuantum ScienceConventional Superlattice DevicesSuperconducting MaterialEngineering	1984	45
Mass-Spectrometric Study of Sputtering of Single Crystals of GaAs by Low-Energy A Ions J. Comas, C. Burleigh Cooper Journal of Applied Physics Single CrystalsEngineeringMass-spectrometric StudyIon Beam InstrumentationIon Implantation	1967	44
Ion Implantation Effects of Nitrogen, Boron, and Aluminum in Hexagonal Silicon Carbide Arrigo Addamiano, Gordon Wood Anderson, J. Comas, Journal of The Electrochemical Society Optical MaterialsEngineeringLaser ApplicationsOptical AbsorptionSemiconductors	1972	41

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