Firooz Faili

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

Huarui Sun, Roland B. Simon, James W. Pomeroy et al. · Applied Physics Letters · 2015 · 188 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Comparison of GaN HEMTs on Diamond and SiC Substrates

Jonathan Felbinger, M. V. Sharath Chandra, Yunju Sun et al. · IEEE Electron Device Letters · 2007 · 159 citations

Semiconductors, Gan-on-diamond Transistors, Electrical Engineering +11

Formation and characterization of 4-inch GaN-on-diamond substrates

Daniel Francis, Firooz Faili, D.I. Babic et al. · Diamond and Related Materials · 2009 · 140 citations

Materials Engineering, Materials Science, Diamond-like Carbon +5

Improved Thermal Interfaces of GaN–Diamond Composite Substrates for HEMT Applications

Jungwan Cho, Zijian Li, Elah Bozorg-Grayeli et al. · IEEE Transactions on Components Packaging and Manufacturing Technology · 2012 · 119 citations

Materials Engineering, Materials Science, Electrical Engineering +14

AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz

D.C. Dumka, Tso-Min Chou, Firooz Faili et al. · Electronics Letters · 2013 · 73 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9