Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Abstract

The performance of an AlGaN/GaN high electron mobility transistor (HEMT) on diamond substrate is reported. Presented is a device with a gate footprint LG=40 nm and a periphery WG=100 µm that exhibits fT=85 GHz and fmax=95 GHz. It is believed that this represents the best frequency performance of a GaN-on-diamond HEMT.