Avogy (United States)

Vertical Power p-n Diodes Based on Bulk GaN

I.C. Kizilyalli, Andrew Edwards, Özgür Aktaş et al. · IEEE Transactions on Electron Devices · 2014 · 335 citations

Semiconductors, Materials Science, Electrical Engineering +13

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez et al. · IEEE Electron Device Letters · 2014 · 333 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

I.C. Kizilyalli, Andrew Edwards, Hui Nie et al. · IEEE Transactions on Electron Devices · 2013 · 247 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

3.7 kV Vertical GaN PN Diodes

I.C. Kizilyalli, Andrew Edwards, Hui Nie et al. · IEEE Electron Device Letters · 2014 · 137 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

4-kV and 2.8-$\text{m}\Omega $ -cm² Vertical GaN p-n Diodes With Low Leakage Currents

I.C. Kizilyalli, T. Prunty, Özgür Aktaş · IEEE Electron Device Letters · 2015 · 131 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8