T. Prunty

Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 389 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical Power p-n Diodes Based on Bulk GaN

I.C. Kizilyalli, Andrew Edwards, Özgür Aktaş et al. · IEEE Transactions on Electron Devices · 2014 · 341 citations

Engineering, Electrical Engineering, Materials Science +16

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez et al. · IEEE Electron Device Letters · 2014 · 337 citations

Engineering, Electrical Engineering, Materials Science +16

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

Hyungtak Kim, Richard M. Thompson, V. Tilak et al. · IEEE Electron Device Letters · 2003 · 186 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

V. Tilak, B. Green, V. Kaper et al. · IEEE Electron Device Letters · 2001 · 152 citations

Engineering, Electrical Engineering, Materials Science +17