Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman, V. Tilak, J. Smart, +10

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorCrystal StructureElectrical EngineeringEngineeringRf Semiconductor +9

Vertical Power p-n Diodes Based on Bulk GaN

I.C. Kizilyalli, Andrew Edwards, Özgür Aktaş, +2

IEEE Transactions on Electron Devices

SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyGan Substrates +11

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez, +7

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsElectronic Engineering +9

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

Hyungtak Kim, Richard M. Thompson, V. Tilak, +3

IEEE Electron Device Letters

Algan-gan Hfet DegradationHot Electron StressElectrical EngineeringWide-bandgap SemiconductorEngineering +11

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

V. Tilak, B. Green, V. Kaper, +5

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics +13

3.7 kV Vertical GaN PN Diodes

I.C. Kizilyalli, Andrew Edwards, Hui Nie, +3

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics +9

4-kV and 2.8-$\text{m}\Omega $ -cm² Vertical GaN p-n Diodes With Low Leakage Currents

I.C. Kizilyalli, T. Prunty, Özgür Aktaş

IEEE Electron Device Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringLow Leakage CurrentsApplied Physics +6

Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

Eduardo M. Chumbes, J. Smart, T. Prunty, +1

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorGate Transfer CharacteristicsElectrical EngineeringEngineeringMicrowave Performance +11

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

J. R. Shealy, V. Kaper, V. Tilak, +4

Journal of Physics Condensed Matter

Electrical EngineeringEngineeringAlgan/gan High-electron-mobility TransistorRf SemiconductorNanoelectronics +7

Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor

A. Vertiatchikh, L.F. Eastman, W. J. Schaff, +1

Electronics Letters