T. Prunty

Undoped AlGaN/GaN HEMTs for microwave power amplification

L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 385 citations

Wide-bandgap Semiconductor, Crystal Structure, Electrical Engineering +11

Vertical Power p-n Diodes Based on Bulk GaN

I.C. Kizilyalli, Andrew Edwards, Özgür Aktaş et al. · IEEE Transactions on Electron Devices · 2014 · 335 citations

Semiconductors, Materials Science, Electrical Engineering +13

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez et al. · IEEE Electron Device Letters · 2014 · 333 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

Hyungtak Kim, Richard M. Thompson, V. Tilak et al. · IEEE Electron Device Letters · 2003 · 185 citations

Algan-gan Hfet Degradation, Hot Electron Stress, Electrical Engineering +13

Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

V. Tilak, B. Green, V. Kaper et al. · IEEE Electron Device Letters · 2001 · 149 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15