Concepedia

Author

I.C. Kizilyalli

University of Illinois Urbana-ChampaignORCID

Also Known As

I C Kizilyalli, I. C. Kizilyalli, I. Kizilyalli, I.C. KIZILYALLI, I.C. Kizilyalli, Isik C Kizilyalli, Isik C. Kizilyalli, Isik Kizilyalli, Isik. C. Kizilyalli, Isik.C. Kizilyalli

145

Publications

4.2K

Citations

30

H-Index

85

Concepts

All Affiliations

University of Illinois Urbana-ChampaignAvogy (United States)AT&T (United States)Sandia National LaboratoriesAdvanced Research Projects Agency - Energy
IK

About

I.C. Kizilyalli is an author at University of Illinois Urbana-Champaign specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

28

51

3.8K

2

Applied Physics

28

47

3.8K

3

Natural Sciences

2

2

113

4

Chemical Engineering

1

1

51

5

Chemistry

1

1

96

I.C. Kizilyalli

×

53

Publications

3.9K

Citations

29

H-Index

YearCitations

27.6% Conversion efficiency, a new record for single-junction solar cells under 1 sun illumination

Brendan M. Kayes, Hui Nie, Rose Twist,

2011

452

Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

Joseph W. Lyding, K. Hess, I.C. Kizilyalli

Applied Physics Letters

1996

359

Vertical Power p-n Diodes Based on Bulk GaN

I.C. Kizilyalli, Andrew Edwards, Özgür Aktaş,

IEEE Transactions on Electron Devices

2014

335

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez,

IEEE Electron Device Letters

2014

333

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

I.C. Kizilyalli, Andrew Edwards, Hui Nie,

IEEE Transactions on Electron Devices

2013

247

Giant isotope effect in hot electron degradation of metal oxide silicon devices

K. Hess, I.C. Kizilyalli, Joseph W. Lyding

IEEE Transactions on Electron Devices

1998

150

3.7 kV Vertical GaN PN Diodes

I.C. Kizilyalli, Andrew Edwards, Hui Nie,

IEEE Electron Device Letters

2014

137

4-kV and 2.8-$\text{m}\Omega $ -cm<sup>2</sup> Vertical GaN p-n Diodes With Low Leakage Currents

I.C. Kizilyalli, T. Prunty, Özgür Aktaş

IEEE Electron Device Letters

2015

131

Vertical GaN Power Diodes With a Bilayer Edge Termination

Jeramy Ray Dickerson, Andrew A. Allerman, Benjamin N. Bryant,

IEEE Transactions on Electron Devices

2015

116

Stacked high-ε gate dielectric for gigascale integration of metal–oxide–semiconductor technologies

P.K. Roy, I.C. Kizilyalli

Applied Physics Letters

1998

99

Page 1