3.7 kV Vertical GaN PN Diodes

Abstract

There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> ) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (Rsp) of 2.95 mΩ-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2.</sup>