IEEE Electron Device Letters · 2014 · 138 citations · 15 references
EngineeringElectrical EngineeringMaterials SciencePower ElectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationIii-v SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageDefect DensityDifferential ResistanceGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGallium Nitride Power ElectronicsJunction Breakdown
There is a great interest in wide band-gap semiconductor devices for power electronics application. In this letter, vertical GaN p-n diodes fabricated on bulk GaN substrates are discussed. The device layers are grown by MOCVD on low defect density (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> ) bulk GaN substrates. The measured devices show breakdown voltages of 3.7 kV with an area differential specific on-resistance (Rsp) of 2.95 mΩ-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2.</sup>
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Y. Saitoh, Kazuhide Sumiyoshi, Masaya Okada et al. · Applied Physics Express · 2010 · 260 citations
Accurate dependence of gallium nitride thermal conductivity on dislocation density
C. Mion, John F. Muth, Edward A. Preble et al. · Applied Physics Letters · 2006 · 220 citations