Dave Bour

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez et al. · IEEE Electron Device Letters · 2014 · 337 citations

Engineering, Electrical Engineering, Materials Science +16

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

I.C. Kizilyalli, Andrew Edwards, Hui Nie et al. · IEEE Transactions on Electron Devices · 2013 · 256 citations

Engineering, Electrical Engineering, Materials Science +17

3.7 kV Vertical GaN PN Diodes

I.C. Kizilyalli, Andrew Edwards, Hui Nie et al. · IEEE Electron Device Letters · 2014 · 138 citations

Engineering, Electrical Engineering, Materials Science +17

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Martha R. McCartney, F. A. Ponce, Juan Cai et al. · Applied Physics Letters · 2000 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

I.C. Kizilyalli, Andrew Edwards, Hui Nie et al. · IEEE Electron Device Letters · 2014 · 50 citations

Engineering, Electrical Engineering, Materials Science +15