Dave Bour

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

Hui Nie, Quentin Diduck, Brian Alvarez et al. · IEEE Electron Device Letters · 2014 · 333 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

High Voltage Vertical GaN p-n Diodes With Avalanche Capability

I.C. Kizilyalli, Andrew Edwards, Hui Nie et al. · IEEE Transactions on Electron Devices · 2013 · 247 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

3.7 kV Vertical GaN PN Diodes

I.C. Kizilyalli, Andrew Edwards, Hui Nie et al. · IEEE Electron Device Letters · 2014 · 137 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography

Martha R. McCartney, F. A. Ponce, Juan Cai et al. · Applied Physics Letters · 2000 · 61 citations

Electron Holography, Wide-bandgap Semiconductor, Electrical Engineering +14

400-A (Pulsed) Vertical GaN p-n Diode With Breakdown Voltage of 700 V

I.C. Kizilyalli, Andrew Edwards, Hui Nie et al. · IEEE Electron Device Letters · 2014 · 50 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8