Hirotaka Otake

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

Hirotaka Otake, Kentaro Chikamatsu, Atsushi Yamaguchi et al. · Applied Physics Express · 2008 · 223 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Bulk Substrates +14

Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges

Hiroyuki Sakairi, Tatsuya Yanagi, Hirotaka Otake et al. · IEEE Transactions on Power Electronics · 2017 · 106 citations · Full text

Device Modeling, Electrical Engineering, Nonlinear Capacitances +15

Three Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High Voltage and High Frequency Operation

Yusuke Nakakohara, Hirotaka Otake, Tristan M. Evans et al. · IEEE Transactions on Industrial Electronics · 2015 · 105 citations · Full text

Electrical Engineering, Engineering, Power Device +11

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm²/(V s) Channel Mobility

Hirotaka Otake, Shin Egami, Hiroaki Ohta et al. · Japanese Journal of Applied Physics · 2007 · 93 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +14

A Fanless Operating Trans-Linked Interleaved 5 kW Inverter Using SiC MOSFETs to Achieve 99% Power Conversion Efficiency

T. Miyazaki, Hirotaka Otake, Yusuke Nakakohara et al. · IEEE Transactions on Industrial Electronics · 2018 · 25 citations

Engineering, Energy Efficiency, Reactor Design +19