GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm²/(V s) Channel Mobility

Abstract

Enhancement-mode metal oxide semiconductor field effect transistors (MOSFETs) with trench gate structures have been developed. These MOSFETs show excellent DC characteristics with on-voltage of 5.1 V, i.e., enhancement-mode operation and extremely high channel mobilities of 133 cm2/(V s). This structure enables us to realize vertical switching devices with high breakdown voltage and highly integrated low on-resistance with the usage of excellent physical parameters of GaN. This excellent performance of these devices breaks though the realization of GaN-based power switching transistors.