Preparation of Pb(Zr,Ti)O3 thin films on electrodes including IrO2

Takashi Nakamura, Yuichi Nakao, Akira Kamisawa, +1

Applied Physics Letters

Materials EngineeringMaterials SciencePzt Thin FilmsEngineeringFerroelectric Application +12

Preparation of Pb(Zr,Ti)O₃ Thin Films on Ir and IrO₂ Electrodes

Takashi Nakamura, Yuichi Nakao, Akira Kamisawa, +1

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringSemiconductorsPzt Thin FilmsIro 2 +12

Uniaxial locked epitaxy of ZnO on the a face of sapphire

Paul Fons, K. Iwata, A. Yamada, +5

Applied Physics Letters

Materials EngineeringMaterials ScienceUnique OrientationEngineeringPhysics +13

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

Ken Nakahara, Shunsuke Akasaka, Hiroyuki Yuji, +13

Applied Physics Letters

Materials ScienceElectrical EngineeringSolid-state LightingEngineeringZno Substrates +6

Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes

Kuniyoshi Okamoto, Hiroaki Ohta, Shigefusa F. Chichibu, +2

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorQuantum PhotonicsStrained InganEngineeringOptical Properties +15

Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy

Ken Nakahara, H. Takasu, Paul Fons, +5

Applied Physics Letters

Materials ScienceSemiconductorsUndoped Zno LayerEngineeringNanotechnology +12

Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals

Kuniyoshi Okamoto, Hiroaki Ohta, Daisuke Nakagawa, +3

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringElectroluminescence EmissionNanoelectronicsLight-emitting Diodes +14

ZnO growth on Si by radical source MBE

K. Iwata, Paul Fons, Shigeru Niki, +5

Journal of Crystal Growth

Materials EngineeringIi-vi SemiconductorZno GrowthEngineeringOxide Electronics +3

GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm²/(V s) Channel Mobility

Hirotaka Otake, Shin Egami, Hiroaki Ohta, +2

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringPower Device +12

Growth of Undoped ZnO Films with Improved Electrical Properties by Radical Source Molecular Beam Epitaxy

Ken Nakahara, Tetsuhiro Tanabe, H. Takasu, +6

Japanese Journal of Applied Physics

Materials ScienceElectrical EngineeringZno GrowthEngineeringOxide Electronics +10