A. Yamada - Concepedia

Author

A. Yamada

National Institute of Advanced Industrial Science and Technology

Also Known As

A Yamada, A. Yamada, Antennas Yamada, Asuka YAMADA, Fons, P., Furue, S., Ishizuka, S., Matsubara, K., Sakurai, T., Umehara, T.

175

Publications

4.2K

Citations

H-Index

Concepts

All Affiliations

National Institute of Advanced Industrial Science and Technology ROHM Tokyo University of Science University of Tsukuba Saitama University

About

A. Yamada is an author at National Institute of Advanced Industrial Science and Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	36	68	3.9K
2	Applied Physics	35	62	3.7K
3	Chemistry	11	11	547
4	Chemical Engineering	3	3	226
5	Natural Sciences	1	1	12

A. Yamada

Publications

Citations

H-Index

Page 1

	Year	Citations
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications Koji Matsubara, Paul Fons, K. Iwata, Thin Solid Films Materials ScienceSolar Cell ApplicationsElectrical EngineeringEngineeringOxide Electronics	2003	261
Uniaxial locked epitaxy of ZnO on the a face of sapphire Paul Fons, K. Iwata, A. Yamada, Applied Physics Letters Materials EngineeringMaterials ScienceUnique OrientationEngineeringPhysics	2000	195
Growth of high-quality epitaxial ZnO films on α-Al2O3 Paul Fons, K. Iwata, Shigeru Niki, Journal of Crystal Growth Materials ScienceOxide HeterostructuresMaterials EngineeringEngineeringOxide Electronics	1999	180
Nitrogen-induced defects in ZnO:N grown on sapphire substrate by gas source MBE K. Iwata, Paul Fons, A. Yamada, Journal of Crystal Growth Chemical EngineeringNitrogen-induced DefectsEngineeringCrystalline DefectsOxide Electronics	2000	167
CIGS solar cell with MBE-grown ZnS buffer layer Muhammad Monirul Islam, Shogo Ishizuka, A. Yamada, Solar Energy Materials and Solar Cells Ii-vi SemiconductorElectrical EngineeringEngineeringApplied PhysicsBuilding-integrated Photovoltaics	2009	156
Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures Hitoshi Tampo, Hajime Shibata, K. Maejima, Applied Physics Letters Materials ScienceIi-vi SemiconductorEngineeringPhysicsNanoelectronics	2008	147
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy Ken Nakahara, H. Takasu, Paul Fons, Applied Physics Letters Materials ScienceSemiconductorsUndoped Zno LayerEngineeringNanotechnology	2001	141
Band-gap modified Al-doped Zn1−xMgxO transparent conducting films deposited by pulsed laser deposition Koji Matsubara, Hitoshi Tampo, Hajime Shibata, Applied Physics Letters Materials EngineeringMaterials ScienceAl-doped Zn1−xmgxo TransparentOptical MaterialsAl-doped Zn1−xmgxo Films	2004	132
Two-dimensional electron gas in Zn polar ZnMgO∕ZnO heterostructures grown by radical source molecular beam epitaxy Hitoshi Tampo, Hajime Shibata, Koji Matsubara, Applied Physics Letters Wide-bandgap SemiconductorEngineeringSemiconductorsIi-vi SemiconductorElectronic Devices	2006	128
ZnO growth on Si by radical source MBE K. Iwata, Paul Fons, Shigeru Niki, Journal of Crystal Growth Materials EngineeringIi-vi SemiconductorZno GrowthEngineeringOxide Electronics	2000	125

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