Yasushi Nanishi

Unusual properties of the fundamental band gap of InN

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Applied Physics Letters · 2002 · 1.5K citations · Full text

Materials Science, Ii-vi Semiconductor, Wurtzite-structured Inn Grown +15

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

Yasushi Nanishi, Yoshiki Saito, Tomohiro Yamaguchi · Japanese Journal of Applied Physics · 2003 · 418 citations · Full text

Engineering, Crystal Growth Technology, Semiconductor Nanostructures +17

Effective electron mass and phonon modes in<i>n</i>-type hexagonal InN

A. Kasic, M. Schubert, Yoshiki Saito et al. · Physical review. B, Condensed matter · 2002 · 171 citations

Infrared Spectroscopic Ellipsometry, Engineering, Physics +13

Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy

N. Teraguchi, Akira Suzuki, Yasushi Nanishi et al. · Solid State Communications · 2002 · 170 citations

Magnetism, Ferromagnetism, Engineering +9

Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistor

Shintaro Miyazawa, Y. Ishii, Satoru Ishida et al. · Applied Physics Letters · 1983 · 136 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12