Yoshiki Saito

Unusual properties of the fundamental band gap of InN

Junqiao Wu, W. Walukiewicz, K. M. Yu et al. · Applied Physics Letters · 2002 · 1.5K citations · Full text

Materials Science, Ii-vi Semiconductor, Wurtzite-structured Inn Grown +15

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

Yasushi Nanishi, Yoshiki Saito, Tomohiro Yamaguchi · Japanese Journal of Applied Physics · 2003 · 418 citations · Full text

Engineering, Crystal Growth Technology, Semiconductor Nanostructures +17

Effective electron mass and phonon modes in<i>n</i>-type hexagonal InN

A. Kasic, M. Schubert, Yoshiki Saito et al. · Physical review. B, Condensed matter · 2002 · 171 citations

Infrared Spectroscopic Ellipsometry, Engineering, Physics +13

Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE

Yoshiki Saito, Hisatomo Harima, Eiji Kurimoto et al. · physica status solidi (b) · 2002 · 110 citations

Materials Science, Semiconductors, Growth Temperature Dependence +11

Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy

Yoshiki Saito, N. Teraguchi, Akira Suzuki et al. · Japanese Journal of Applied Physics · 2001 · 96 citations

Semiconductors, Engineering, Rf Semiconductor +14