Atsushi Yamaguchi

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 924 citations

Engineering, Thick Gan Layers, Optoelectronic Devices +18

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

Hirotaka Otake, Kentaro Chikamatsu, Atsushi Yamaguchi et al. · Applied Physics Express · 2008 · 223 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Bulk Substrates +14

Formation of pseudomorphic nanocages from Cu ₂ O nanocrystals through anion exchange reactions

Hsin-Lun Wu, Ryota Sato, Atsushi Yamaguchi et al. · Science · 2016 · 128 citations

Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Masaru Kuramoto, Chiaki Sasaoka, Y. Hisanaga et al. · Japanese Journal of Applied Physics · 1999 · 110 citations

Wide-bandgap Semiconductor, Engineering, Laser Applications +17

All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation

Ryota Ishii, Akio Kaneta, Mitsuru Funato et al. · Physical Review B · 2010 · 80 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +15