Atsushi Yamaguchi

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

Engineering, Materials Engineering, Materials Science +17

Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

Hirotaka Otake, Kentaro Chikamatsu, Atsushi Yamaguchi et al. · Applied Physics Express · 2008 · 228 citations

Engineering, Electrical Engineering, Microelectronics +13

Formation of pseudomorphic nanocages from Cu ₂ O nanocrystals through anion exchange reactions

Hsin-Lun Wu, Ryota Sato, Atsushi Yamaguchi et al. · Science · 2016 · 129 citations

Natural Sciences, Chemistry, Materials Science +17

Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Masaru Kuramoto, Chiaki Sasaoka, Y. Hisanaga et al. · Japanese Journal of Applied Physics · 1999 · 110 citations

Engineering, Electrical Engineering, Materials Science +16

All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation

Ryota Ishii, Akio Kaneta, Mitsuru Funato et al. · Physical Review B · 2010 · 80 citations · Full text

Natural Sciences, Materials Science, Physics +13