Japanese Journal of Applied Physics · 1999 · 110 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCurrent DensityGallium Nitride (Gan) MaterialsQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser DiodesSingle-mode Lasers
Continuous-wave operation at room-temperature has been demonstrated for InGaN multi-quantum-well (MQW) laser diodes (LDs) grown on low-dislocation-density n-GaN substrates with a backside n-contact. The current, current density and voltage at the lasing threshold were 144 mA, 10.9 kA/cm 2 and 10.5 V, respectively, for a 3 µm wide ridge-geometry diode with high-reflection dielectric coated mirrors. Single-transverse-mode emission was observed in the far-field pattern of the LDs and the beam full width at half power in the parallel and perpendicular directions was 6° and 25°, respectively.
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