Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact

Masaru Kuramoto, Chiaki Sasaoka, Y. Hisanaga, +7

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorEngineeringLaser ApplicationsOptoelectronic DevicesHigh-power Lasers +15

Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth

Akira Sakai, Haruo Sunakawa, Akitaka Kimura, +1

Applied Physics Letters

Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringDislocation Interaction +11

Crystallinity of poly‐N‐vinylcarbazole

Akitaka Kimura, Shigeki Yoshimoto, Yoshinori Akana, +4

Journal of Polymer Science Part A-2 Polymer Physics

Materials SciencePolymer MaterialEngineeringPolymer SciencePolymer Property +4

Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Naotaka Kuroda, Chiaki Sasaoka, Akitaka Kimura, +2

Journal of Crystal Growth

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringLow Dislocation Densities +5

Epitaxial GaN1−yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy

Akitaka Kimura, C. A. Paulson, H. F. Tang, +1

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorEpitaxial GrowthEngineeringOptical Properties +10

X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique

Kenji Kobayashi, Atsushi Yamaguchi, Shigeru Kimura, +3

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEpitaxial GrowthEngineering +13

Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy

Atsushi Yamaguchi, Takashi Manako, Akira Sakai, +4

Japanese Journal of Applied Physics

SemiconductorsHexagonal GanElectrical EngineeringCrystal StructureEngineering +11

Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy

Akitaka Kimura, H. F. Tang, T. F. Kuech

Journal of Crystal Growth

Materials ScienceMaterials EngineeringEpitaxial GrowthEngineeringApplied Physics +5

Growth of InN by Chloride-Transport Vapor Phase Epitaxy

Haruo Sunakawa, Atsushi Yamaguchi, Akitaka Kimura, +1

Japanese Journal of Applied Physics

Materials EngineeringMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering +11

Alloy Semiconductor System with Tailorable Band-Tail: A Band-State Model and Its Verification Using Laser Characteristics of InGaN Material System

Atsushi Yamaguchi, Masaru Kuramoto, Akitaka Kimura, +2

Japanese Journal of Applied Physics

Ingan Material SystemWide-bandgap SemiconductorEngineeringLaser MaterialIngan Alloy System +16