Publication | Closed Access

Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringLow Dislocation DensitiesApplied PhysicsAluminum Gallium NitrideGan Power DevicePn-junction ProfilesPrecise Control