Applied Physics Letters · 1997 · 242 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesLaser DiodesLaser PhysicsQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresSemiconductor LasersCarrier LifetimeCharge Carrier DensityFull Width At Half MaximumLaser ThresholdQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser Diodes
Carrier lifetime and threshold carrier density were estimated at 5 ns and 1×10^20 cm⁻³, respectively. The InGaN multi‑quantum‑well laser diodes achieved room‑temperature continuous‑wave operation with a 24–40 min lifetime, 80 mA threshold current, 6.5 V voltage, single‑mode 400.23 nm emission (0.002 nm FWHM), near‑field beam widths of 1.6 µm (parallel) and 0.8 µm (perpendicular), and far‑field angles of 6.8° and 33.6°.
The continuous-wave operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature with a lifetime of 24–40 min. The threshold current and the voltage of the LDs were 80 mA and 6.5 V, respectively. The laser emission was a fundamental single-mode emission with a peak wavelength of 400.23 nm and a full width at half-maximum of 0.002 nm. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 and 0.8 μm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively. The carrier lifetime and the threshold carrier density were estimated to be 5 ns and 1×1020/cm3, respectively.
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations