Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

TLDR

Carrier lifetime and threshold carrier density were estimated at 5 ns and 1×10^20 cm⁻³, respectively. The InGaN multi‑quantum‑well laser diodes achieved room‑temperature continuous‑wave operation with a 24–40 min lifetime, 80 mA threshold current, 6.5 V voltage, single‑mode 400.23 nm emission (0.002 nm FWHM), near‑field beam widths of 1.6 µm (parallel) and 0.8 µm (perpendicular), and far‑field angles of 6.8° and 33.6°.

Abstract

The continuous-wave operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature with a lifetime of 24–40 min. The threshold current and the voltage of the LDs were 80 mA and 6.5 V, respectively. The laser emission was a fundamental single-mode emission with a peak wavelength of 400.23 nm and a full width at half-maximum of 0.002 nm. The beam full width at half-power values for the parallel and the perpendicular near-field patterns were 1.6 and 0.8 μm, respectively. Those of the far-field patterns were 6.8° and 33.6°, respectively. The carrier lifetime and the threshold carrier density were estimated to be 5 ns and 1×1020/cm3, respectively.