Akira Usui

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 924 citations

Engineering, Thick Gan Layers, Optoelectronic Devices +18

Discriminating between different genetic types of marine ferro-manganese crusts and nodules based on rare earth elements and yttrium

Michael Bau, Katja Schmidt, Andrea Koschinsky et al. · Chemical Geology · 2014 · 533 citations

Rare Earth Mineral, Engineering, Trace Element Geochemistry +9

Defect structure in selectively grown GaN films with low threading dislocation density

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1997 · 411 citations

Wide-bandgap Semiconductor, Engineering, Defect Structure +16

Chemical and structural control of the partitioning of Co, Ce, and Pb in marine ferromanganese oxides

Yoshio Takahashi, Alain Manceau, Nicolas Geoffroy et al. · Geochimica et Cosmochimica Acta · 2007 · 295 citations

Materials Science, Inorganic Chemistry, Chemical Engineering +9

Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1998 · 204 citations

Materials Science, Materials Engineering, Electrical Engineering +15