Hiroyuki Sakairi

High performance SiC trench devices with ultra-low ron

Takashi Nakamura, Yoshiaki Nakano, Masatoshi Aketa et al. · 2011 · 262 citations

Electrical Engineering, Semiconductor Device, Engineering +9

Measurement Methodology for Accurate Modeling of SiC MOSFET Switching Behavior Over Wide Voltage and Current Ranges

Hiroyuki Sakairi, Tatsuya Yanagi, Hirotaka Otake et al. · IEEE Transactions on Power Electronics · 2017 · 106 citations · Full text

Device Modeling, Electrical Engineering, Nonlinear Capacitances +15

690V, 1.00 mΩcm<sup>2</sup> 4H-SiC Double-Trench MOSFETs

Yuki Nakano, Ryota Nakamura, Hiroyuki Sakairi et al. · Materials science forum · 2012 · 41 citations

Electrical Engineering, Engineering, High Voltage Engineering +11

Circuit simulation of a silicon-carbide MOSFET considering the effect of the parasitic elements on circuit boards by using S-parameters

Tatsuya Yanagi, Hiroyuki Sakairi, Hirotaka Otake et al. · 2018 · 15 citations

Device Modeling, Electrical Engineering, Engineering +12

Electrothermal Cosimulation for Predicting the Power Loss and Temperature of SiC MOSFET Dies Assembled in a Power Module

Yohei Nakamura, Tristan M. Evans, Naotaka Kuroda et al. · IEEE Transactions on Power Electronics · 2019 · 12 citations · Full text

Sic Mosfet, Electrical Engineering, Power Module +15