2011 · 272 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationLeakage Power ReductionSemiconductor Device MaterialsShort-channel EffectsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesElectric Field ScreeningSchottky Barrier CharacteristicsSchottky Barrier DiodesSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesThreshold Current ReductionThreshold VoltageThreshold Voltage Extraction
We have developed SiC trench structure Schottky diodes and SiC double-trench MOSFETs. We succeeded in improving device performance by the reduction of the electric field through the introduction of the aforementioned trench structures. The threshold voltage of the trench structure Schottky diode is 0.48V smaller than the planar. Also, the lowest on-resistance in SiC MOSFETs was achieved.
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