High performance SiC trench devices with ultra-low ron

Abstract

We have developed SiC trench structure Schottky diodes and SiC double-trench MOSFETs. We succeeded in improving device performance by the reduction of the electric field through the introduction of the aforementioned trench structures. The threshold voltage of the trench structure Schottky diode is 0.48V smaller than the planar. Also, the lowest on-resistance in SiC MOSFETs was achieved.