Masatoshi Aketa

High performance SiC trench devices with ultra-low ron

Takashi Nakamura, Yoshiaki Nakano, Masatoshi Aketa et al. · 2011 · 262 citations

Electrical Engineering, Semiconductor Device, Engineering +9

Novel developments towards increased SiC power device and module efficiency

Takashi Nakamura, Masatoshi Aketa, Yoshiaki Nakano et al. · 2012 · 25 citations

Sic Devices, Engineering, Power Devices +17

Progress and future challenges of SiC power devices and process technology

Tsunenobu Kimoto, Hiroki Niwa, Noritada Kaji et al. · 2017 · 24 citations

Sic Device Physics, Engineering, Future Challenges +21

High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch

Seigo Mori, Masatoshi Aketa, Takui Sakaguchi et al. · IEEE Transactions on Electron Devices · 2017 · 23 citations

High-performance Bidirectional Switch, Electrical Engineering, Semiconductor Device +14

Demonstration of 3 kV 4H-SiC reverse blocking MOSFET

Seigo Mori, Masatoshi Aketa, Takui Sakaguchi et al. · 2016 · 19 citations

Sic Rb Mosfets, Semiconductor Technology, Electrical Engineering +12