High performance SiC trench devices with ultra-low ron

Takashi Nakamura, Yoshiaki Nakano, Masatoshi Aketa, +4

Electrical EngineeringSemiconductor DeviceEngineeringPower DeviceNanoelectronics +7

Novel developments towards increased SiC power device and module efficiency

Takashi Nakamura, Masatoshi Aketa, Yoshiaki Nakano, +2

Sic DevicesEngineeringPower DevicesEnergy EfficiencySilicon Carbide +15

Progress and future challenges of SiC power devices and process technology

Tsunenobu Kimoto, Hiroki Niwa, Noritada Kaji, +4

Sic Device PhysicsEngineeringFuture ChallengesPower DevicesSic Power Devices +19

High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch

Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, +4

IEEE Transactions on Electron Devices

High-performance Bidirectional SwitchElectrical EngineeringSemiconductor DeviceEngineeringRb Mosfet +12

Demonstration of 3 kV 4H-SiC reverse blocking MOSFET

Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, +3

Sic Rb MosfetsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +10

SiC Power Device Evolution Opening a New Era in Power Electronics

Kazuhide Ino, Mineo Miura, Yuki Nakano, +2

Electrical EngineeringSemiconductor DeviceEngineeringPower DevicePower Devices +9

Characterization of 3.3 kV and 6.5 kV SiC MOSFETs

Takui Sakaguchi, Masatoshi Aketa, Takashi Nakamura, +2

Semiconductor TechnologyElectrical EngineeringEngineeringKv Sic MosfetsHigh Voltage Engineering +8

Reliability-aware design of metal/high-k gate stack for high-performance SiC power MOSFET

Takuji Hosoi, Shuji Azumo, Yusaku Kashiwagi, +8

EngineeringSic-based Power MosfetPower ElectronicsSemiconductor DeviceReliability Engineering +15

Estimation of junction temperature at failure of SiC DMOSFETs in UIS test

Yuichiro Nanen, Masatoshi Aketa, Hirokazu Asahara, +1

Electrical EngineeringAvalanche FailureEngineeringSic DmosfetsPower Device +12

Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer

Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, +3

IEEE Journal of the Electron Devices Society

SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering +13