Seigo Mori

Progress and future challenges of SiC power devices and process technology

Tsunenobu Kimoto, Hiroki Niwa, Noritada Kaji et al. · 2017 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

High-Temperature Characteristics of 3-kV 4H-SiC Reverse Blocking MOSFET for High-Performance Bidirectional Switch

Seigo Mori, Masatoshi Aketa, Takui Sakaguchi et al. · IEEE Transactions on Electron Devices · 2017 · 23 citations

Engineering, Electrical Engineering, Materials Science +14

Demonstration of 3 kV 4H-SiC reverse blocking MOSFET

Seigo Mori, Masatoshi Aketa, Takui Sakaguchi et al. · 2016 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Suppression of Punch-Through Current in 3 kV 4H-SiC Reverse-Blocking MOSFET by Using Highly Doped Drift Layer

Seigo Mori, Masatoshi Aketa, Takui Sakaguchi et al. · IEEE Journal of the Electron Devices Society · 2018 · 12 citations · Full text

Engineering, Electrical Engineering, Materials Science +12