Concepedia

Threshold Voltage Scaling

Threshold Voltage Scaling is a semiconductor device scaling methodology that specifically governs the proportional reduction of the threshold voltage in field-effect transistors to maintain performance and power efficiency as device dimensions are miniaturized.

352

Publications

21.5K

Citations

1.5K

Authors

298

Institutions

Publications per year

2017–2026

29

Parents

Publications

352

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

Chenming Hu, Jeffrey Bokor, Tsu‐Jae King et al. · IEEE Transactions on Electron Devices · 2000 · 1.6K citations

, , +13

Minimizing power consumption in digital CMOS circuits

Anantha P. Chandrakasan, R.W. Brodersen · Proceedings of the IEEE · 1995 · 1K citations

, , +17

Near-Threshold Computing: Reclaiming Moore's Law Through Energy Efficient Integrated Circuits

Ronald Dreslinski, Michael Wieckowski, David Blaauw et al. · Proceedings of the IEEE · 2010 · 830 citations

, , +16

The impact of intrinsic device fluctuations on CMOS SRAM cell stability

A.J. Bhavnagarwala, Xinghai Tang, J.D. Meindl · IEEE Journal of Solid-State Circuits · 2001 · 685 citations

, , +17

Supply and threshold voltage scaling for low power CMOS

R. Gonzalez, B.M. Gordon, Mark Horowitz · IEEE Journal of Solid-State Circuits · 1997 · 643 citations

, , +17

1–5 of 352

Authors

1.5K

  1. AP
    Anantha P. Chandrakasan

    Massachusetts Institute of Technology, United States

    13 publications · 2.4K citations

    12

    h-index

  2. TH
    Toshiro Hiramoto

    The University of Tokyo, Japan

    8 publications · 305 citations

    8

    h-index

  3. DB
    David Blaauw

    University of Michigan, United States

    7 publications · 1.2K citations

    7

    h-index

  4. AS
    Alessandro S. Spinelli

    Politecnico di Milano, Italy

    6 publications · 362 citations

    6

    h-index

  5. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    6 publications · 423 citations

    6

    h-index

1–5 of 1.5K

Institutions

298

  1. IBM (United States)

    Armonk, United States

    17 h-index

    141 publications

    7.9K citations

  2. Intel (United States)

    Santa Clara, United States

    15 h-index

    59 publications

    4K citations

  3. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    15 h-index

    57 publications

    3.1K citations

  4. Massachusetts Institute of Technology

    Cambridge, United States

    13 h-index

    36 publications

    4K citations

  5. Hitachi (Japan)

    Tokyo, Japan

    13 h-index

    52 publications

    4.6K citations

  6. Georgia Institute of Technology

    Atlanta, United States

    13 h-index

    33 publications

    3.2K citations

  7. University of California, Berkeley

    Berkeley, United States

    10 h-index

    33 publications

    15.6K citations

  8. Texas Instruments (United States)

    Dallas, United States

    10 h-index

    43 publications

    1.7K citations

1–8 of 298

Venues

  1. IEEE Transactions on Electron Devices

    48 publications · 5.1K citations

    28

    h-index

  2. Solid-State Electronics

    19 publications · 553 citations

    14

    h-index

  3. IEEE Journal of Solid-State Circuits

    14 publications · 2.7K citations

    13

    h-index

  4. Applied Physics Letters

    13 publications · 608 citations

    12

    h-index

  5. IEEE Electron Device Letters

    14 publications · 958 citations

    12

    h-index

1–5