Fikadu Alema - Concepedia

Author

Fikadu Alema

Agnitron Technology (United States)ORCID

Also Known As

Alema, Fikadu, F L Alema, Fikadu Alema

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Agnitron Technology (United States)University of California, Santa Barbara University of Central Florida University of Utah University of Wisconsin–Madison

About

Fikadu Alema is an author at Agnitron Technology (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	24	1.4K
2	Applied Physics	18	23	1.4K
3	Electrical Engineering	12	12	743
4	Chemistry	2	2	182
5	Chemical Engineering	1	1	40

Fikadu Alema

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature Yuewei Zhang, Fikadu Alema, Akhil Mauze, APL Materials Wide-bandgap SemiconductorEngineeringElectron MobilityElectronic DevicesMolecular Beam Epitaxy	2018	251
Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD Fikadu Alema, B. Hertog, A. Osinsky, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal Growth TechnologyOxide Electronics	2017	144
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor G. A. Seryogin, Fikadu Alema, Nicholas Valente, Applied Physics Letters Materials EngineeringMaterials ScienceOxide HeterostructuresEngineeringβ-Ga2o3 Thin Films	2020	136
Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD Fikadu Alema, Yuewei Zhang, A. Osinsky, APL Materials Engineeringβ-Ga2o3 Thin FilmsCrystal Growth TechnologyMocvd Grown β-Ga2o3Oxygen Grown Film	2020	101
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown <b>β</b>-Ga2O3 Fikadu Alema, Yuewei Zhang, A. Osinsky, APL Materials	2019	94
Solar blind photodetector based on epitaxial zinc doped Ga<sub>2</sub>O<sub>3</sub> thin film Fikadu Alema, B. Hertog, Oleg Ledyaev, physica status solidi (a) Optical MaterialsEngineeringSolar Blind PhotodetectorsZngao DetectorsZngao Detector	2017	90
Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film Fikadu Alema, B. Hertog, Partha Mukhopadhyay, APL Materials Schottky PhotodiodeElectrical EngineeringOptical MaterialsEngineeringPhotoelectric Sensor	2019	89
Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm² Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, IEEE Electron Device Letters	2021	83
Epitaxial <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub> and <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>/<inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Heterostructures Growth for Power Electronics Ross Miller, Fikadu Alema, A. Osinsky IEEE Transactions on Semiconductor Manufacturing Materials ScienceMaterials EngineeringSub XmlnsEngineeringHigh Quality	2018	81
Vertical <b> <i>β</i> </b>-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition Esmat Farzana, Fikadu Alema, Wan Ying Ho, Applied Physics Letters Materials ScienceElectrical EngineeringElectronic DevicesEngineeringEpitaxial Films	2021	70

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