Yuichi Oshima - Concepedia

Author

Yuichi Oshima

National Institute for Materials Science ORCID

Also Known As

OSHIMA, Yoshibumi, Oshima, Yuichi, Y. OSHIMA, Y. Oshima, Yuichi Oshima

Publications

3.2K

Citations

H-Index

Concepts

All Affiliations

National Institute for Materials Science Hitachi (Japan)University of California, Santa Barbara University of Michigan NEC (Japan)

About

Yuichi Oshima is an author at National Institute for Materials Science specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	25	32	2.6K
2	Applied Physics	25	32	2.6K
3	Electrical Engineering	13	13	932
4	Chemistry	3	3	131
5	Chemical Engineering	1	1	98

Yuichi Oshima

Publications

Citations

H-Index

Page 1

	Year	Citations
Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation Yuichi Oshima, Takeshi Eri, Masatomo Shibata, Japanese Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringThick Gan LayerEngineering	2003	282
Materials issues and devices of α- and β-Ga2O3 Elaheh Ahmadi, Yuichi Oshima Journal of Applied Physics	2019	261
Ge doping of β-Ga<sub>2</sub>O<sub>3</sub> films grown by plasma-assisted molecular beam epitaxy Elaheh Ahmadi, Onur S. Koksaldi, Stephen W. Kaun, Applied Physics Express Materials ScienceMaterials EngineeringOxide HeterostructuresEngineeringElectronic Materials	2017	259
Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy Yuichi Oshima, Encarnación G. Vı́llora, Yoshitaka Matsushita, Journal of Applied Physics Materials ScienceOxide HeterostructuresMaterials EngineeringEngineeringGallium Chloride	2015	237
Halide vapor phase epitaxy of twin-free α-Ga<sub>2</sub>O<sub>3</sub>on sapphire (0001) substrates Yuichi Oshima, Encarnación G. Vı́llora, Kiyoshi Shimamura Applied Physics Express Materials ScienceEpitaxial GrowthOptical MaterialsEngineeringGallium Chloride	2015	209
Demonstration of β-(Al<i><sub>x</sub></i>Ga<sub>1−</sub><i><sub>x</sub></i>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub>modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy Elaheh Ahmadi, Onur S. Koksaldi, Xun Zheng, Applied Physics Express SemiconductorsMaterials ScienceOxide HeterostructuresAtomic Force MicroscopyEngineering	2017	206
Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method Takehiro Yoshida, Yuichi Oshima, Takeshi Eri, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringSurface Science	2007	125
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy Yuichi Oshima, Encarnación G. Vı́llora, Kiyoshi Shimamura Journal of Crystal Growth Materials EngineeringQuasi-heteroepitaxial GrowthOxide HeterostructuresMaterials ScienceOff-angled Sapphire	2014	113
Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy Yuichi Oshima, Katsuaki Kawara, Takashi Shinohe, APL Materials Oxide HeterostructuresMaterials EngineeringMaterials ScienceDislocation BendingEngineering	2018	111
Composition determination of β-(Al<sub>x</sub>Ga<sub>1−</sub> <sub>x</sub>)<sub>2</sub>O<sub>3</sub> layers coherently grown on (010) β-Ga<sub>2</sub>O<sub>3</sub> substrates by high-resolution X-ray diffraction Yuichi Oshima, Elaheh Ahmadi, Ştefan C. Bǎdescu, Applied Physics Express Materials ScienceEngineeringCrystalline DefectsO 3Crystal Growth Technology	2016	107

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