Japanese Journal of Applied Physics · 2003 · 285 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDislocations In SemiconductorsEpitaxial GrowthIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor SurfacesWide Band Gap SemiconductorsDislocation DensityDislocation NetworksDislocations In Epitaxial FilmsEpitaxial Wafer PreparationGallium Nitride (Gan) MaterialsHydride Vapor Phase EpitaxyPit DensityVoids
We have developed a novel technique for preparing large-scale freestanding GaN wafers. Hydride vapor phase epitaxy (HVPE) growth of thick GaN layer was performed on a GaN template with a thin TiN film on the top. After the cooling process of the HVPE growth, the thick GaN layer was easily separated from the template by the assistance of many voids generated around the TiN film. As a result, a freestanding GaN wafer was obtained. The wafer obtained had a diameter of 45 mm, and a mirror-like surface. The-full-width-at-half-maximum (FWHM) of (0002) and (1010) peaks in the X-ray rocking curve profile were 60 and 92 arcsec, respectively. The dislocation density was evaluated at 5×106 cm-3 by etch pit density measurement.
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