A. Usui

Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Yuichi Oshima, Takeshi Eri, Masatomo Shibata et al. · Japanese Journal of Applied Physics · 2003 · 282 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Recombination of free and bound excitons in GaN

B. Ḿonemar, J. P. Bergman, T. V. Shubina et al. · physica status solidi (b) · 2008 · 128 citations

Semiconductors, Quantum Science, Wide-bandgap Semiconductor +15

Evidence for Two Mg Related Acceptors in GaN

B. Monemar, Carl Hemmingsson, J. P. Bergman et al. · Physical Review Letters · 2009 · 122 citations

Physics, Applied Physics, Aluminum Gallium Nitride +6

Detection of Interstitial Ga in GaN

K. H. Chow, G. D. Watkins, A. Usui et al. · Physical Review Letters · 2000 · 120 citations

Intrinsic defects in GaN.  I.  Ga sublattice defects observed by optical detection of electron paramagnetic resonance

K. H. Chow, L. S. Vlasenko, P. Johannesen et al. · Physical Review B · 2004 · 49 citations

Wide-bandgap Semiconductor, Gallium Vacancy, Engineering +17