P. N. Grillot

High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Michael R. Krames, Mari Ochiai-Holcomb, G. E. Höfler et al. · Applied Physics Letters · 1999 · 453 citations

Optical Materials, Engineering, High-power Truncated-inverted-pyramid +17

High Power LEDs - Technology Status and Market Applications

Frank M. Steranka, J Bhat, D. M. Collins et al. · physica status solidi (a) · 2002 · 224 citations

White Oled, Electrical Engineering, Solid-state Lighting +13

Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures

P. N. Grillot, Steven A. Ringel, Eugene A. Fitzgerald et al. · Journal of Applied Physics · 1995 · 80 citations · Full text

Materials Science, Semiconductors, Dlts Peaks +12

Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes

P. N. Grillot, Michael R. Krames, Hanmin Zhao et al. · IEEE Transactions on Device and Materials Reliability · 2006 · 52 citations

White Oled, Electrical Engineering, Solid-state Lighting +11

Minority- and majority-carrier trapping in strain-relaxed Ge0.3Si0.7/Si heterostructure diodes grown by rapid thermal chemical-vapor deposition

P. N. Grillot, Steven A. Ringel, Eugene A. Fitzgerald et al. · Journal of Applied Physics · 1995 · 44 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15