K. Adomi - Concepedia

Author

K. Adomi

University of Illinois Urbana-Champaign

Also Known As

K Adomi, K. ADOMI, K. Adomi

Publications

886

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign Purdue University West Lafayette ShinEtsu Chemical (Japan)

About

K. Adomi is an author at University of Illinois Urbana-Champaign specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	852
2	Applied Physics	11	11	852
3	Electrical Engineering	9	9	785
4	Materials Engineering	2	2	40
5	Materials Science	2	2	607

K. Adomi

Publications

852

Citations

H-Index

Page 1

	Year	Citations
Gallium arsenide and other compound semiconductors on silicon S. F. Fang, K. Adomi, Swaminathan P. Iyer, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringEpitaxial GrowthHeteroepitaxial Growth Schemes	1990	583
GaAs/Ge/GaAs heterostructures by molecular beam epitaxy S. Strite, M. Selim Ünlü, K. Adomi, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena SemiconductorsElectrical EngineeringGaas GrowthEngineeringTransistor Characteristics	1990	52
Characterization of GaAs grown on Si epitaxial layers on GaAs substrates K. Adomi, S. Strite, H. Morkoç̌, Journal of Applied Physics Wide-bandgap SemiconductorEngineeringApd ShapesSi Epitaxial LayersSemiconductors	1991	43
Deep Level Generation-Annihilation in Nitrogen Doped FZ Crystals Takao Abé, Hidekiyo Harada, Nobuo Ozawa, MRS Proceedings EngineeringPhysicsCrystal Growth TechnologyDeep Level Generation-annihilationApplied Physics	1985	43
Antiphase-domain-free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy K. Adomi, S. Strite, H. Morkoç̌ Applied Physics Letters Electrical EngineeringEpitaxial GrowthEngineeringSi InterfacePhysics	1990	28
Characterization of AlGaP/GaP heterostructures grown by MOVPE K. Adomi, N. Noto, A. Nakamura, Journal of Crystal Growth Materials EngineeringMaterials ScienceAluminium NitrideAlgap/gap HeterostructuresEngineering	1992	24
Si as a diffusion barrier for Ge/GaAs heterojunctions S. Strite, M. Selim Ünlü, K. Adomi, Applied Physics Letters SemiconductorsSemiconductor DevicesElectrical EngineeringSimilar DiodesEngineering	1990	19
Electrical characteristics of <i>p</i>+-Ge/(<i>N</i>-GaAs and <i>N</i>-AlGaAs) junctions and their applications to Ge base transistors M. Selim Ünlü, S. Strite, Guangjun Gao, Applied Physics Letters EngineeringSemiconductor PhysicsSemiconductor MaterialsSemiconductor DeviceSemiconductors	1990	16
Study of sublattice orientation of GaAs on Ge S. Strite, D. Biswas, K. Adomi, Journal of Applied Physics SemiconductorsMaterials EngineeringElectrical EngineeringGaas Surface ReconstructionEngineering	1990	16
AlGaAs/Ge/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy S. Strite, M. Selim Ünlü, K. Adomi, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringHeterojunction Bipolar Transistor	1990	15

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