A.H. Shah

Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon

S.D.S. Malhi, H. Shichijo, S. Banerjee et al. · IEEE Transactions on Electron Devices · 1985 · 190 citations

Engineering, Computer Engineering, Electrical Engineering +17

Influences of a high excitation frequency (70 MHz) in the glow discharge technique on the process plasma and the properties of hydrogenated amorphous silicon

F. Finger, U. Kroll, V. Viret et al. · Journal of Applied Physics · 1992 · 100 citations · Full text

Natural Sciences, Materials Science, Physics +17

High rate growth of microcrystalline silicon by VHF-GD at high pressure

U. Graf, J. Meier, U. Kroll et al. · Thin Solid Films · 2003 · 92 citations · Full text

Engineering, Materials Engineering, Materials Science +13

Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride source

G. Pollack, W.F. Richardson, S.D.S. Malhi et al. · IEEE Electron Device Letters · 1984 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical properties and degradation kinetics of compensated hydrogenated microcrystalline silicon deposited by very high-frequency-glow discharge

R. Flückiger, J. Meier, M. Goetz et al. · Journal of Applied Physics · 1995 · 62 citations · Full text

Engineering, Materials Engineering, Materials Science +16