IEEE Electron Device Letters · 1988 · 196 citations · 3 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsTransistor BiasingBody EffectCurrentsElectron Impact IonizationGate-dependent Current-voltage BehaviorIonizationLatch TechniquePositive FeedbackPositive Feedback Loops
A single-transistor latch phenomenon observed in silicon-on-insulator (SOI) MOSFETs is reported. This latch effect, which occurs at high drain biases, is an extreme case of floating-body effects which are present in SOI MOSFETs. The floating body results in positive feedback between the impact ionization current, body-to-source diode forward bias, and transistor currents. At large drain voltages, this positive feedback can maintain a high-drain-to-source current even when the MOS gate is biased well below its threshold voltage.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Improved subthreshold characteristics of n-channel SOI transistors
J. Davis, A.E. Glaccum, K.J. Reeson et al. · IEEE Electron Device Letters · 1986 · 87 citations
Operation of CMOS devices with a floating well
Hans Zappe, Ruchi Gupta, I. Sakai et al. · IEEE Transactions on Electron Devices · 1987 · 21 citations
Engineering, Electrical Engineering, Electronic Materials +14