B.-Y. Mao - Concepedia

Author

B.-Y. Mao

Texas Instruments (United States)ORCID

Also Known As

B. Y. Mao, B. ‐Y. Mao, B.-Y Mao, B.-Y. Mao, B.Y. Mao, Baihai Mao, Bor-Yen Mao, Bor‐Yen Mao

Publications

605

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)Boeing (United States)United States Naval Research Laboratory

About

B.-Y. Mao is an author at Texas Instruments (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	531
2	Applied Physics	12	12	518
3	Electrical Engineering	10	10	462
4	Chemical Engineering	1	1	22
5	Computer Engineering	1	1	13

B.-Y. Mao

Publications

545

Citations

H-Index

Page 1

	Year	Citations
Single-transistor latch in SOI MOSFETs C.-D. Chen, M. Matloubian, R. Sundaresan, IEEE Electron Device Letters Positive FeedbackElectrical EngineeringEngineeringSingle-transistor LatchStress-induced Leakage Current	1988	192
Microstructure of high-temperature annealed buried oxide silicon-on-insulator B.-Y. Mao, P.‐H. Chang, Hon Wai Lam, Applied Physics Letters Materials ScienceElectrical EngineeringEngineeringTop Silicon LayerCrystalline Defects	1986	73
Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures B.-Y. Mao, Cheng-Eng Chen, G. Pollack, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringSemiconductor DeviceBias Temperature Instability	1987	38
Microstructural characterization of nitrogen-implanted silicon-on-insulator P.-H. Chang, C. Slawinski, B.-Y. Mao, Journal of Applied Physics Materials ScienceIon ImplantationEngineeringCrystalline DefectsMicrofabrication	1987	35
Modeling of the subthreshold characteristics of SOI MOSFETs with floating body M. Matloubian, C.-E.D. Chen, B.-Y. Mao, IEEE Transactions on Electron Devices Device ModelingPositive FeedbackElectrical EngineeringSemiconductor DeviceEngineering	1990	31
Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator B.-Y. Mao, Changxin Chen, M. Matloubian, IEEE Transactions on Nuclear Science Electrical EngineeringBack Channel DevicesEngineeringNanoelectronicsBias Temperature Instability	1986	28
The effects of oxygen dose on the formation of buried oxide silicon-on-insulator B.-Y. Mao, P.-H. Chang, Changxin Chen, Journal of Applied Physics Materials ScienceElectrical EngineeringIon ImplantationEngineeringBuried Oxide	1987	22
High resolution transmission electron microscopy of silicon-on-insulator formed by high dose oxygen implantation Peng‐Heng Chang, B.-Y. Mao Applied Physics Letters Materials ScienceElectrical EngineeringIon ImplantationEngineeringSemiconductor Device	1987	22
The Applications of Citric Acid/Hydrogen Peroxide Etching Solutions in the Processing of Pseudomorphic MODFETs B.-Y. Mao, J. A. Nielsen, R.A. Friedman, Journal of The Electrochemical Society Materials ScienceSemiconductor TechnologyChemical EngineeringElectrical EngineeringEngineering	1994	22
The characteristics of CMOS devices in oxygen-implanted silicon-on-insulator structures B.-Y. Mao, R. Sundaresan, C.-E.D. Chen, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringOxygen ImplantationOxide SemiconductorsApplied Physics	1988	21

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