J.G. Fossum - Concepedia

Author

J.G. Fossum

Also Known As

Fossum, J., J. Fossum, J. G. Fossum, J.G Fossum, J.G. Fossum, JERRY G. FOSSUM, Jawarani, D., Jerry G Fossum, Jerry G. Fossum, Rao, R.A.

261

Publications

9.1K

Citations

H-Index

Concepts

All Affiliations

University of Florida Sandia National Laboratories California

About

J.G. Fossum is an author at University of Florida specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	50	133	8.6K
2	Electrical Engineering	49	129	8.2K
3	Applied Physics	44	106	7.3K
4	Computer Engineering	27	42	2K
5	Materials Science	3	3	112

J.G. Fossum

135

Publications

8.7K

Citations

H-Index

Page 1

	Year	Citations
Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's Hyung-Kyu Lim, J.G. Fossum IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringSoi Mosfet	1983	685
Short-channel effects in SOI MOSFETs S. Veeraraghavan, J.G. Fossum IEEE Transactions on Electron Devices Electrical EngineeringShort-channel EffectsVlsi DesignEngineeringFilm Thickness	1989	301
Anomalous leakage current in LPCVD PolySilicon MOSFET's J.G. Fossum, A. Ortíz-Conde, H. Shichijo, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage Current	1985	296
Nanoscale FinFETs with gate-source/drain underlap Vishal Trivedi, J.G. Fossum, M.M. Chowdhury IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEffective UnderlapEngineeringVlsi Design	2004	270
Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's J.-Y. Choi, J.G. Fossum IEEE Transactions on Electron Devices Device ModelingFloating-body Bipolar EffectsElectrical EngineeringEngineeringBias Temperature Instability	1991	250
A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon J.G. Fossum, D.S. Lee Solid-State Electronics Electrical EngineeringEngineeringPhysicsPhysical ModelBias Temperature Instability	1982	228
Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs Lixin Ge, J.G. Fossum IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronics	2002	221
Application of the superposition principle to solar-cell analysis F.A. Lindholm, J.G. Fossum, Eric Burgess IEEE Transactions on Electron Devices Electrical EngineeringDark Current-voltage CharacteristicEngineeringPhysicsSolar Power	1979	213
Physical operation of back-surface-field silicon solar cells J.G. Fossum IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPhysicsNanoelectronicsOrganic Solar Cell	1977	196
Double-gate CMOS: symmetrical- versus asymmetrical-gate devices Keunwoo Kim, J.G. Fossum IEEE Transactions on Electron Devices Device ModelingLow-power ElectronicsElectrical EngineeringNumerical Device-simulation ResultsEngineering	2001	194

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