S. Veeraraghavan - Concepedia

Author

S. Veeraraghavan

University of Florida

Also Known As

S Veeraraghavan, S. Veeraraghavan, Srilashmii Veeraraghavan, Surya Veeraraghavan

Publications

936

Citations

H-Index

Concepts

All Affiliations

University of Florida Motorola (United States)IBM (United States)Arizona State University Philips (Netherlands)

About

S. Veeraraghavan is an author at University of Florida specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	836
2	Electrical Engineering	12	14	761
3	Applied Physics	11	11	648
4	Computer Engineering	7	7	189
5	Environmental Engineering	1	1	31

S. Veeraraghavan

Publications

860

Citations

H-Index

Page 1

	Year	Citations
Short-channel effects in SOI MOSFETs S. Veeraraghavan, J.G. Fossum IEEE Transactions on Electron Devices Electrical EngineeringShort-channel EffectsVlsi DesignEngineeringFilm Thickness	1989	301
A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD S. Veeraraghavan, J.G. Fossum IEEE Transactions on Electron Devices EngineeringStrong InversionPower ElectronicsThin-film Soi MosfetInterconnect (Integrated Circuits)	1988	136
Partitioned-charge-based modeling of bipolar transistors for non-quasi-static circuit simulation J.G. Fossum, S. Veeraraghavan IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringCircuit SystemCircuit Design	1986	72
A Surface Potential-Based Compact Model of n-MOSFET Gate-Tunneling Current Xin Gu, T.-L. Chen, G. Gildenblat, IEEE Transactions on Electron Devices Device ModelingAggressive ScalingElectrical EngineeringEsaki-tsu FormulaEngineering	2004	55
A novel approach for modelling of water jet peening N Rajesh, S. Veeraraghavan, N. Ramesh Babu International Journal of Machine Tools and Manufacture EngineeringFluid MechanicsUnderwater ExplosionModeling And SimulationMultiphase Flow	2004	44
A physics-based, dynamic thermal impedance model for SOI MOSFET's J.S. Brodsky, R.M. Fox, D.T. Zweidinger, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringThermal-equivalent CircuitBias Temperature Instability	1997	32
Modeling adsorption in liquid—solid fluidized beds S. Veeraraghavan, L.T. Fan, A. P. Mathews Chemical Engineering Science EngineeringEnvironmental EngineeringFluid MechanicsLiquid-liquid FlowLiquid—solid Fluidized Beds	1989	31
Significance of the channel&#8212;Charge partition in the transient MOSFET model J.G. Fossum, Hae-Duck J. Jeong, S. Veeraraghavan IEEE Transactions on Electron Devices	1986	24
On the gate capacitance limits of nanoscale DG and FD SOI MOSFETs Lixin Ge, F. Gámiz, G.O. Workman, IEEE Transactions on Electron Devices Device ModelingGate Capacitance LimitsElectrical EngineeringFd Soi MosfetsEngineering	2006	23
PSP-SOI: An advanced surface potential based compact model of partially depleted SOI MOSFETs for circuit simulations Weimin Wu, X. Li, G. Gildenblat, Solid-State Electronics Device ModelingElectrical EngineeringAdvanced Surface PotentialCompact ModelEngineering	2008	22

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