G. Gildenblat - Concepedia

Author

G. Gildenblat

Also Known As

G Gildenblat, G. GILDENBLAT, G. Gildenblat, G. Sh. GILDENBLAT, G. Sh. Gildenblat, G.. Gildenblat, G.S. Gildenblat, G.SH. Gildenblat, G.Sh. Gildenblat, GENNADY GILDENBLAT

173

Publications

Citations

H-Index

Concepts

All Affiliations

Pennsylvania State University Arizona State University Philips (Netherlands)NXP (Netherlands)IBM (United States)

About

G. Gildenblat is an author at Pennsylvania State University specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	33	69	3.4K
2	Applied Physics	27	43	2.6K
3	Computer Engineering	13	13	744
4	Natural Sciences	1	1	77
5	Biostatistics	1	1	16

G. Gildenblat

Publications

3.6K

Citations

H-Index

Page 1

	Year	Citations
PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation G. Gildenblat, Xiaoyue Li, Weimin Wu, IEEE Transactions on Electron Devices EngineeringPower ElectronicsSemiconductor DeviceAdvanced Surface-potential-based ModelNanoelectronics	2006	400
The electrical properties and device applications of homoepitaxial and polycrystalline diamond films G. Gildenblat, Stephen Grot, Andrzej Badzian Proceedings of the IEEE EngineeringOptoelectronic DevicesElectrical PropertiesSemiconductor DeviceSemiconductors	1991	203
The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film Stephen Grot, G. Gildenblat, C. W. Hatfield, IEEE Electron Device Letters Diamond FilmAu/diamond ContactsEngineeringElectrical PropertiesSemiconductor Device	1990	197
A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation N.D. Arora, G. Gildenblat IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringLow Temperatures	1987	146
SP: an advanced surface-potential-based compact MOSFET model G. Gildenblat, Hailing Wang, Ten-Lon Chen, IEEE Journal of Solid-State Circuits Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringCircuit Design	2004	133
Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films G. Gildenblat, Stephen Grot, C. R. Wroński, Applied Physics Letters Materials ScienceElectrical CharacteristicsElectrical EngineeringDiamond-like CarbonAluminum Contacts	1988	129
Analytical approximation for the MOSFET surface potential T.L. Chen, G. Gildenblat Solid-State Electronics Numerical AnalysisDevice ModelingElectrical EngineeringEngineeringPotential Theory	2001	118
Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 K Cheng‐Liang Huang, G. Gildenblat IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1990	99
High-temperature thin-film diamond field-effect transistor fabricated using a selective growth method G. Gildenblat, Stephen Grot, C. W. Hatfield, IEEE Electron Device Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesMasking Layer	1991	99
The barrier height of Schottky diodes with a chemical-vapor-deposited diamond base M. Hicks, C. R. Wroński, Stephen Grot, Journal of Applied Physics EngineeringInternal Photoemission TechniqueThin Film Process TechnologySemiconductor DeviceBarrier Height	1989	80

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